Alkali Metal Doping on Sol-gel-derived Copper Oxide for Performance Enhancement of Thin-film Transistors
IEEE Journal on Flexible Electronics（2024）
摘要
In recent years, copper oxide (CuxO) has emerged as a promising
p
-type oxide semiconductor owing to its high Hall mobility. However, its inherent drawbacks, such as the substantial native defects and uncontrolled stoichiometry, limit its application in thin-film transistors (TFTs) for energy-efficient complementary devices. In this study, we employ the sol-gel synthetic approach for facile doping to investigate the doping effects of alkali metals (Li, Na, K) on the electrical performance of Cu
x
O TFTs. The results demonstrate that doping, particularly with lithium (Li), significantly improves the electrical performance of Cu
x
O TFTs. The similarity in ionic radius facilitates efficient hole transport, which considerably enhances the field-effect mobility (4.7×10
-3
cm
2
/Vs), subthreshold swing (8.3 V/dec), and on-off current ratio (~10
4
) with minimized hysteresis. The structural analysis of the Li-doped Cu
x
O films using X-ray diffraction does not exhibit any significant lattice distortion and an increase in the grain size implies the reduction of trap sites. Consequently, the successful fabrication of Li-doped Cu
x
O TFTs on polyimide substrates, using ZrO
x
as a gate dielectric layer, demonstrates its compatibility with flexible electronics. This approach enhances the electrical performance of
p
-type CuxO TFTs and presents a scalable and efficient pathway for the development of advanced TFT technology in flexible electronics.
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关键词
alkali metal doping,copper oxide,p-type oxide,sol-gel process,thin-film transistors
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