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Suppression of Dislocations in DRAM STI Structure

Bonhwi Gu, Injae Bae, Dongsik Park,Byoungdeog Choi

IEEE Transactions on Electron Devices(2024)

Cited 0|Views2
Key words
Silicon,Stress,Random access memory,Films,Stress measurement,Reliability,Crystals,Dynamic random access memory (DRAM),DRAM design rule,silicon dislocation defects,silicon stress simulation
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