50 Gbps vertical separate absorption charge multiplication Ge/Si avalanche waveguide photodetectors integrated in a 300-mm Si photonics platform

We report 35 GHz Ge-on-Si avalanche photodetectors integrated on 300-mm SOI wafers, enabling high-quality eye diagrams at 50 Gbps NRZ, and low thermal drift of the breakdown voltage (<9 mV/°C). Early stress tests show only a mild drift of dark current and breakdown voltage.