Report of GaN HEMTs on 8-in Sapphire
IEEE transactions on electron devices/IEEE transactions on electron devices(2024)
Abstract
The two crucial factors of large scale and high voltage can hardly be balanced for the traditional GaN HEMTs on Si substrates. Recently, one promising solution, GaN-on-sapphire, has attracted great attention. However, the commercialized GaN-on-sapphire wafers ever reported are usually 6 in. It is urgent to develop 8-in GaN-on-sapphire to reduce the cost and meet the market demands. In this work, to the best of our knowledge, an 8-in GaN-on-sapphire wafer is demonstrated for the first time. The sheet resistance $\textit{R}_{{\Box}} $ exhibits a wafer-level nonuniformity of 4% and an average value of 310 $\bm\Omega/\Box$ , and the warpage is kept to 30 $\mu $ m, by dedicatedly tuning the 1.98- $\mu $ m buffer stack. The fabricated 200-V HEMTs exhibit a low $\textit{R}_{\biosc{on}}$ of 6.5 $\bm\Omega \cdot\text{mm}$ , a $\textit{V}_{\text{TH}}$ of $-$ 4.2 V, and an OFF-state breakdown voltage above 500 V without any field plate. The electrical mapping visualizes $\textit{R}_{\biosc{on}}$ and $\textit{V}_{\text{TH}}$ distributed in concentric circles across the wafer. Generally, this work demonstrates the feasibility of realizing 8-in GaN-on-sapphire for power electronics applications in the future.
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Key words
MODFETs,HEMTs,Logic gates,Epitaxial growth,Substrates,Electron devices,Wide band gap semiconductors,8-in sapphire,GaN HEMTs,power electronics
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