The dopant (n- and p-type), band gap, and size-dependent field electron emission induced from silicon nanowires

Chandra Kumar, Vikas Kayashap, Juan Escrig, Monika Srivastava,Vivek Kumar, Fernando Guzman-Olivos,Kapil Saxena

Physical Chemistry Chemical Physics（2024）

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摘要

This study investigates the electron field emission induced from vertical silicon nanowires (SiNWs) fabricated onto n-type Si(100) and p-type Si(100) substrates using catalyst-induced etching. The impact of dopant (n- and...

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