A Novel SPICE Model of Shorted-Anode Lateral Insulated-Gate Bipolar Transistor

This paper proposes a novel SPICE model for capturing the I–V and C–V characteristics and the switching waveforms of shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT). Due to the absence of the description of the shorted-anode structure, existing IGBT models cannot capture the ICE-VCE curves of SA-LIGBT under low VCE. Thus, this paper adds a branch representing the shorted-anode structure to the SPICE model and considers the impact of large injection effect on this branch. The proposed model is connected in series with an RC network to reproduce self-heating effect, which has faster computational speed and better convergence compared to conventional RC thermal network. In addition, a charge storage model with variable carrier lifetime is presented to describe the extraction of carriers through the shorted-anode structure during turn-off period, thereby eliminating the problem that conventional models cannot capture the turn-on and turn-off waveforms simultaneously. The experimental data is used to verify the accuracy of the proposed model.