Development of the X-ray polarimeter using CMOS imager: polarization sensitivity of a 1.5 μ m pixel CMOS sensor
arxiv(2024)
Abstract
We are developing an imaging polarimeter by combining a fine-pixel CMOS image
sensor with a coded aperture mask as part of the cipher project, aiming to
achieve X-ray polarimetry in the energy range of
10x201330 keV. A successful proof-of-concept
experiment was conducted using a fine-pixel CMOS sensor with a 2.5 μ
m pixel size. In this study, we conducted beam experiments to assess the
modulation factor (MF) of the CMOS sensor with a 1.5 μ m pixel
size manufactured by Canon and to determine if there was any improvement in the
MF. The measured MF was 8.32%± 0.34% at 10 keV and 16.10%± 0.68% at 22 keV, exceeding those of the 2.5 μ m
sensor in the 6x201322 keV range. We also evaluated
the quantum efficiency of the sensor, inferring a detection layer thickness of
2.67 ± 0.48 μ m. To develop a more sensitive polarimeter, a sensor
with a thicker detection layer, smaller pixel size, and reduced thermal
diffusion effect is desirable.
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