Shallow core levels, or how to determine the doping and T_c of Bi_2Sr_2CaCu_2O_8+δ and Bi_2Sr_2CuO_6+δ without cooling
arxiv(2024)
Abstract
Determining the doping level in high-temperature cuprate superconductors is
crucial for understanding the origin of superconductivity in these materials
and for unlocking their full potential. However, accurately determining the
doping level remains a significant challenge due to a complex interplay of
factors and limitations in various measurement techniques. In particular, in
Bi_2Sr_2CuO_6+δ and Bi_2Sr_2CaCu_2O_8+δ, where
the mobile carriers are introduced by non-stoichiometric oxygen δ, the
determination has been extremely problematic. Here, we study the doping
dependence of the electronic structure of these materials in angle-resolved
photoemission and find that both the doping level, p, and the superconducting
transition temeprature, T_c can be precisely determined from the binding
energy of the Bi 5d core-levels. The measurements can be performed at room
temperature, enabling the determination of p and T_c without cooling the
samples. This should be very helpful for further studies of these materials.
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