Intrinsic localized excitons in MoSe_2/CrSBr heterostructures
arxiv(2024)
摘要
We present a comprehensive investigation of optical properties in
MoSe_2/CrSBr heterostructures, unveiling the presence of localized excitons
represented by a new emission feature, X^*. We demonstrate through
temperature- and power-dependent photoluminescence spectroscopy that X^*
originates from excitons confined by intrinsic defects within the CrSBr layer.
The valley polarization of X^* and trion peaks displays opposite polarity
under a magnetic field, which closely correlates with the magnetic order of
CrSBr. This is attributed to spin-dependent charge transfer mechanisms across
the heterointerface, supported by density functional theory calculations
revealing a type-II band alignment and spin-polarized band structures.
Furthermore, the strong in-plane anisotropy of CrSBr induces unique
polarization-dependent responses in MoSe_2 emissions. Our study highlights
the crucial role of defects in shaping excitonic properties. It offers valuable
insights into spectral-resolved proximity effects in van der Waals
heterostructures between semiconductor and magnet, contributing to advancing
spintronic and valleytronic devices.
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