Demonstration of High-Growth-Rate Epitaxially Grown Si Channel on 3D NAND Test Vehicle with Memory Functionality.
International Memory Workshop(2024)
Abstract
The solid selective epitaxial (Epi) channel with high growth rate > 400 nm/min is demonstrated on a short stack 3D NAND test vehicle in this work. The Epi channel grown from the bottom to the top features well-aligned crystalline orientations with the substrate and large domain sizes. To our knowledge, this represents a significant advancement, showcasing the successful demonstration of high channel current with good memory functionality, including a large memory window > 10V. The insights gained from this study contribute to the ongoing efforts in optimizing memory architectures for improved read current margins for more than 500 wordlines.
MoreTranslated text
Key words
3D NAND,cell string current,Epitaxially Si channel,current enhancement
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined