A Novel Approach for Doping Two-Dimensional MOS2 Materials: ZNO Polar Interfacial Charge Transfer Method

Lijun Xu,Guohui Zhan,Kun Luo, Yukun Shi,Jiangtao Liu,Zhenhua Wu

2024 Conference of Science and Technology for Integrated Circuits (CSTIC)（2024）

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摘要

The performance of monolayer Mos2 devices is restricted by low carrier density and contact resistivity. It is crucial to discover a new doping technology to overcome these limitations. In this study, we have devised a novel approach for doping Mos2. By utilizing the ZnO polarity of the different elements interface, Mos2 can be doped with n/p doping. We also constructed a dual-ended device and found that this method indeed increased the intrinsic current at 4.5nm by 10 ⁶ times.

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关键词

Contact Resistance,Carrier Density,Interface Elements,Low Carrier Density,Band Gap,Density Functional Theory,Charge Density,Heterostructures,Band Structure,Fermi Level,Spacer Region,Generalized Gradient Approximation,Charge Accumulation,Fermi Dirac,Device Model,Device Resistance,Doped Materials,Charge Density Difference,Electron Accumulation,Top Gate,Doping Method,Non-equilibrium Green’s Function,ZnO Surface,Charge Depletion

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