A Physical Based 2D Monte Carlo Simulation of MO-ECRAM Programming for Device Optimization
2024 Conference of Science and Technology for Integrated Circuits (CSTIC)（2024）
Abstract
Three-terminal metal-oxide electrochemical random-access memory (MO-ECRAM) with high switching linearity has attracted much attention in the novel neuromorphic computing field. In this work, a 2D atomistic Monte Carlo simulation is developed based on the dynamic behaviors of oxygen vacancies. The simulation can quantify the linear/nonlinear switching characteristics under various voltage and temperature stresses, which will be beneficial to optimize the performances of MO-ECRAM.
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Key words
Monte Carlo Simulation,Oxygen Vacancies,Switching Characteristics,Simulation Results,Electrolyte,Physical Mechanisms,Channel Conductance,Switching Speed
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