Chemical Effect Mechanism in Chemical Mechanical Polishing of Silicon Wafer

Xuejie Wang,Chenwei Wang, Xing Li, Lijiao Jiang,Shuangshuang Lei

2024 Conference of Science and Technology for Integrated Circuits (CSTIC)（2024）

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Abstract

In this paper, the effect of the addition of three additives (A1, A2, and A3) to the polishing slurry on the surface of single crystal silicon during chemical mechanical polishing (CMP) is compared. It is found that A3 has better hydrophilicity by atomic force microscopy (AFM) and contact angle experiments, and its mechanism was analyzed.

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Key words

Silicon Wafer,Chemical Mechanism,Chemical Polishing,Chemical Mechanical Polishing,Atomic Force Microscopy,Contact Angle,Silicon Surface,Silicon Crystal,Hydroxyl,Particle Size,Hydrogen Bonds,Agglomerates,Surface Tension,Particle Surface,Removal Rate,Colloidal Particles,Blank Group,Si Wafer,Adsorption Layer,SiO2 Surface,Silicon Wafer Surface,Wafer Surface,Material Removal Rate,Final Polishing,Polishing Machine,Polishing Process

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