A Novel Ultralow Voltage Slope Device

Novel device architectures based on oxide materials have overcome the fundamental thermionic limit of the switching slope (60 mV/ dec). However, a versatile switching device required for highly integrated memory and neuromorphic applications has not been achieved with such exceptional switching slope characteristics. Here, we demonstrate a record-low switching voltage slope down to 0.221 mV/dec in a threshold switching device based on the novel du-al-layer oxide stacked structure, and the threshold voltage of the device can be as low as 0.177V.