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Huifang Ma,Kejing Huang,Ruixia Wu,Zhengwei Zhang,Jia Li,Bei Zhao,Chen Dai,Ziwei Huang, Hongmei Zhang,Xiangdong Yang,Bo Li,Yuan Liu,Xiangfeng Duan,Xidong Duan

InfoMat（2021）

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Abstract
The synthesis of 2D WSe2 nanosheets, CoSe‐WSe2 lateral heterostructures. The field‐effect transistors (FETs) of CoSe‐WSe2 lateral heterostructures show satisfactory Ohmic contacts and considerably better FET performance over those with deposited Cr/Au contacts, suggesting the in‐plane metal‐semiconductor junctions may function as improved contacts for the atomically thin transistors. (DOI: 10.1002/inf2.12157 ) image
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