Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a P-Doping-free GaN Cap
JOURNAL OF ELECTRONIC MATERIALS（2024）
关键词
Normally-off,u-GaN cap,ultrathin-barrier (UTB) AlGaN,GaN heterostructure,gate voltage swing,off-state leakage
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