EM and CT synergistic SERS enhancement in Si/TiO2/Ag heterostructures via local interfacial effect

The Si/TiO2/Ag heterostructures with high SERS sensitivity were prepared by sol–gel and electrochemical self-assembly. The electromagnetic (EM) and charge transferring (CT) synergistic mechanism for SERS enhancement was explored by FDTD. The “localized interfacial effect (LIE)” of metal–semiconductor heterostructures can result in the CT between them and the charge carriers’ redistribution, which can facilitate the probe molecules’ adsorption and generate the 3D volume-enhancement of electromagnetic fields, therefore improve the SERS performance effectively. Furthermore, the morphology of Ag was flexibly regulated by changing the applied voltage, and the optimal SERS performance was achieved. With the R6G as a probe molecule, the ultra-low concentration of 10-13 M can be detected. The EF is estimated to be about 1.75 × 1011, and the RSD is about 4.3 %. The photocatalytic effect of Si/TiO2/Ag heterostructure can realize the SERS substrates’ UV self-cleaning and recyclable use with high stability.