C54-TiSi2 FORMATION USING NANOSECOND LASER ANNEALING OF A-Si/Ti/A-Si STACKS

Low resistive Ti-based contacts are required to reach the targeted performances of 3D imaging devices. To fulfill this request, the C54-TiSi2 phase appears to be the most efficient. However, in view of monolithic integration, the temperature needed to form C54-TiSi2 must be drastically reduced by at least 100°C in order to avoid damage in other parts of the device. Indeed, as these 3D imaging devices require the co-integration of Ti and Ni based silicides, it is crucial to develop a thermal treatment which allows to form the C54-TiSi2 phase without agglomerating the NiSi layer (i.e. at temperatures lower than 600°C). In this work, a three-layer stack made of a Ti layer in between two amorphous Si thin films deposited on (100) Si substrate has been studied. Nanosecond laser annealing (NLA) followed by rapid thermal annealing (RTA) from 500 to 800°C were performed on those stacks. Sheet resistance and X-Ray Diffraction measurements showed that the C54-TiSi2 phase could be formed with a RTA treatment at a temperature as low as 600°C in this case. In line with some previous work, this was due to another phase sequence involving the C40-TiSi2 during the laser annealing. The most favorable microstructure to form C54-TiSi2 by a subsequent RTA treatment seemed to be a matrix made of amorphous titanium silicide containing grains of the C40-TiSi2 template phase. This hypothetical microstructure was formed by laser annealing at a lower energy density when layers of amorphous Si were used.