Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET

For the first time, we investigate a drain current (read current) degradation in Ferroelectric field effect transistor (Fe-FET). This phenomenon is due to trapping/de-trapping charge rather than charged remnant polarization (Pr) of ferroelectric layer. That is explained as a de-trapped compensation charge from the channel-side interfacial layer (IL), and a trapped charge from substrate silicon channel. This modeling is corroborated by experimental results pertaining to the polarization magnitude, applied electrical field, and thickness of the channel IL. Through TCAD simulation, this is also verified and explained that amount of compensation charge (Qit) is changed. Following a comprehensive investigation, we propose optimal pulse conditions for accurate read operations and suggest specific physical parameters for the channel IL in Fe-FETs.