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Exploring the Border Traps Near the SiO2-SiC Interface Using Conductance Measurements

P. Kumar, M. Krummenacher, H. G. Medeiros,S. Race,P. Natzke,I. Kovacevic-Badstubner,M. E. Bathen,U. Grossner

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024（2024）

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Key words
Silicon carbide,MOS capacitor,border traps,conductance measurement,interface traps
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