Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress

S. R. Stein, J. Kim, S. Das,D. J. Lichtenwalner, S. Ryu

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024（2024）

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关键词

Charge pumping,gate stress,interface traps,silicon carbide (SiC),threshold voltage

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