Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design
arxiv(2024)
Abstract
Exploration and advancements in ultra-wide bandgap (UWBG) semiconductors are
pivotal for next-generation high-power electronics and deep-ultraviolet (DUV)
optoelectronics. A critical challenge lies in finding a semiconductor that is
highly transparent to DUV wavelengths yet conductive with high mobility at room
temperature. Here, we achieved both high transparency and high conductivity by
employing a thin heterostructure design. The heterostructure facilitated high
conductivity by screening phonons using free carriers, while the atomically
thin films ensured high transparency. We utilized a heterostructure comprising
SrSnO3/La:SrSnO3/GdScO3 (110) and applied electrostatic gating to effectively
separate electrons from their dopant atoms. This led to a modulation of carrier
density from 1018 cm-3 to 1020 cm-3, with room temperature mobilities ranging
from 40 to 140 cm2V-1s-1. The phonon-limited mobility, calculated from first
principles, closely matched experimental results, suggesting that
room-temperature mobility could be further increased with higher electron
density. Additionally, the sample exhibited 85
nm wavelength. These findings highlight the potential of heterostructure design
for transparent UWBG semiconductor applications, especially in deep-ultraviolet
regime.
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