Laser‐Annealed SiO₂/Si_1−xGe_x Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation

Ultraviolet nanosecond laser annealing (UV‐NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of NLA grows in tandem with the escalating intricacy of integration schemes in nanoscaled devices. Silicon–germanium alloys are studied for decades for their compatibility with silicon devices. Indeed, they enable the manipulation of properties like strain, carrier mobilities, and bandgap. In this framework, they can for instance boost the performances of p‐type MOSFETs but also enable near infrared absorption and emission for applications in photodetection and photonics. Laser melting on such types of layers, however, results, up to now, in the development of extended defects and poor control over layer morphology and homogeneity. Herein, the laser melting of ≈700 nm‐thick relaxed silicon–germanium samples coated with SiO2 nanoarrays, observing the resulting material to maintain an unaltered lattice, is investigated. It is found that the geometrical parameters of the silicon oxide have an impact on the thermal budget samples, influencing melt threshold, melt depth, and germanium distribution.