Ultra-Fast Ge-on-Si Photodetectors.
Optical Fiber Communications Conference and Exhibition(2024)
摘要
A Ge-fin photodetector in which un-doped germanium is laterally sandwiched between complementary in situ-doped silicon is demonstrated, allowing for unprecedented 3-dB bandwidths up to 265 GHz. Here, we review our work on ultra-fast Ge photodiodes.
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关键词
Photodetector,Ionizing Radiation,Epitaxial,Photocurrent,Optical Power,Dark Current,Dry Etching,Minority Carrier,Si Layer,Symbol Rate
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