Ultra-Fast Ge-on-Si Photodetectors.

Stefan Lischke,Daniel Steckler,Anna Peczek,Jesse S. Morgan,Andreas Beling,Lars Zimmermann

Optical Fiber Communications Conference and Exhibition（2024）

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摘要

A Ge-fin photodetector in which un-doped germanium is laterally sandwiched between complementary in situ-doped silicon is demonstrated, allowing for unprecedented 3-dB bandwidths up to 265 GHz. Here, we review our work on ultra-fast Ge photodiodes.

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关键词

Photodetector,Ionizing Radiation,Epitaxial,Photocurrent,Optical Power,Dark Current,Dry Etching,Minority Carrier,Si Layer,Symbol Rate

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