Uncooled Operation of Directly Modulated Membrane Laser with Buried Sapphire Layer on Si Substrate.

Tatsurou Hiraki,Yoshiho Maeda,Takuro Fujii,Koji Takeda,Takuma Aihara,Toru Segawa,Yasutomo Ota,Satoshi Iwamoto,Yasuhiko Arakawa,Shinji Matsuo

Optical Fiber Communications Conference and Exhibition（2024）

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摘要

A membrane laser with a buried sapphire layer on Si has 3-dB bandwidths of 40-25 GHz at 25-80°C. The laser demonstrates 80-Gbit/s PAM4 operations up to 80°C at an energy cost of 0.77 pJ/bit.

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关键词

Si Substrate,Sapphire Layer,Energy Cost,Buried Layer,Low Cost,Thermal Conductivity,Output Power,Waveguide,Thermal Expansion,Thermal Resistance,Laser Wavelength,Current Injection,Photonic Integrated Circuits,Low Refractive Index,Distributed Bragg Reflector,Eye Diagrams,Distributed Feedback,Cavity Design,Optical Confinement,Input Electrical Power

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