Discrimination of dislocation in highly doped n-type 4H–SiC by combining electrochemical reaction and molten alkali etching

This work proposes an effective etching method for highly doped n-type 4H–SiC by combining electrochemical reactions and molten alkali etching. By employing our developed method, threading mixed dislocation (TMDs) and threading screw dislocations (TSDs) can be distinctly visualized as hexagonal etching pits of varying sizes. The slightly smaller threading edge dislocations (TEDs) appear as roughly circular etching pits, while basal plane dislocations (BPDs) are revealed as characteristic seashell-shaped pits. Additionally, we provide a reaction equation that elucidates the mechanism of the electrochemical etching process, thus sparking a new investigation into the discrimination of dislocations under molten alkali conditions. By applying a positive voltage to the wafer, we ensure a continuous supply of holes crucial for the reaction, thereby maintaining both the etching rate and the selectivity towards defects. This approach not only enhances the efficiency of the etching process but also provides a more accurate and reliable method for characterizing and understanding the dislocation properties of highly doped n-type 4H–SiC wafers.