A novel test structure with two active areas for eNVM reliability studies

Khaled Alkema,Franck Melul,Vincenzo Della Marca,Marc Bocquet,Madjid Akbal,Arnaud Regnier,Stephan Niel,Francesco La-Rosa

2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)（2024）

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摘要

This paper presents a test structure with a poly floating gate shared on two actives areas. Programming and erase can be split toward these two regions with a specific arsenic implantation. The aim is to study the tunnel oxide degradation and the injection efficiency of embedded charge storage memory cells.

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