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Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

Xiaohong Zhao, Hongwei Wang, Yihao Zhang,You Chen,Siyi Cheng,Xing Wang,Fang Peng,Yongjian Yang, Guannan Tang,Yurong Bai, Shaowei Sun

Electronics(2024)

Cited 0|Views12
Key words
hetero-junction bipolar transistor,degradation mechanism,model simulation,irradiation defects
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