Analysis of continuous laser-irradiation resistance of liquid-crystal optical switch based on sapphire-substrate GaN.

Developing high-power laser technology and its applications necessitates improvements in the laser-irradiation resistance of liquid-crystal modulation devices. In this study, the thermal characteristics of substrate and electrode materials, including sapphire-substrate indium tin oxide (ITO) electrodes, K9 glass-substrate ITO electrodes, sapphire-substrate gallium nitride (GaN) electrodes, and liquid-crystal optical switches, are investigated using simulation and experimental methods. Results show that the sapphire-substrate GaN electrode demonstrates the best heat dissipation and that the maximum temperature at the center of the spot under 75 W laser irradiation is 319 K, 52 K lower than that of an equally thick sapphire-substrate ITO electrode and 225 K lower than that of an equally thick K9 glass-substrate ITO electrode (steady state and test time >2min). Additionally, the experimental results show that the liquid-crystal optical switch, comprising a sapphire substrate and GaN electrode, can endure continuous laser irradiation up to 18 W with a switching ratio of approximately 20:1. The optical switch with GaN electrodes on a sapphire substrate can endure a power density of 156W/c m 2, much higher than that (21W/c m 2, steady state and test time >2min) tolerable by the liquid-crystal optical switch with ITO transparent electrodes and K9 glass substrates.