Effects of Mn doping on the conduction mechanism and dielectric nonlinearity of Na_0.5Bi_0.5TiO₃ thin film

In this work, the conduction mechanism and dielectric nonlinearity of undoped and Mn-doped Na0.5Bi0.5TiO3 (NBT) films were investigated. The potential conduction mechanism in relatively low electric fields should be dominated by hopping conduction rather than typical Ohmic conduction. In the high electric field region, the conduction mechanism is dominated by Poole-Frenkel emission and Schottky emission. The enhancement of electrical insulation of NBT films after Mn doping was shown to result from a decrease in oxygen vacancies and elevation of the conduction energy barrier. Furthermore, significant improvements in the nonlinearity of both the dielectric constant and polarization of Mn-doped NBT films were observed, as indicated by the results of Rayleigh fitting and first-order reversal curve distributions. Such enhancements were attributed to the reduction in domain wall pinning, decreased interference from electrostatic potential and improved leakage characteristics.