NO₂ gas response and recovery properties of ambipolar CNT-FETs with various CNT/CNT junctions

Gas sensors based on ambipolar carbon nanotube (CNT) field-effect transistors with various amounts of CNTs were fabricated by dielectrophoretic assembly. The nitrogen dioxide (NO2) gas response and recovery properties of the transistors were measured to investigate the effect of CNT amount on gas response. For the device with a small amount of CNTs, responses from the CNT bulk and CNT/electrode contacts were observed. For devices with a large amount of CNTs, in which a network-like structure of CNTs was observed near the electrodes, an increased current in both electron and hole conduction regions was observed compared with that for the device with a small amount of CNTs. The increased current in the electron conduction region rapidly decreased during recovery. This response is consistent with that of CNT/CNT X-type contacts, which have a high resistance before NO2 adsorption. Equivalent circuits of CNT channels with CNT/CNT contacts were developed, allowing the transistor behavior to be qualitatively discussed. Evaluation of time constants revealed that CNT/electrode contacts and CNT/CNT X-type contacts exhibited high NO2 adsorption and desorption rates, respectively.