Characteristics of -(Al_xGa_1-x)₂O₃/Ga_{2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD}

beta-(AlxGa1-x)(2)O-3/Ga2O3 modulation-doped field-effect transistors (MODFETs) with a dual-metal gate (DMG) architecture are designed, and the electrical characteristics of the DMG device are investigated in comparison with the single-metal gate (SMG) device by the Technology Computer-Aided Design (TCAD) simulation. The results demonstrate that the DMG MODFETs possess a superior transconductance (g(m)), current gain cut-off frequency (f(T)), and power gain cut-off frequency (f(MAX)) than those of SMG transistors, which is attributed to the regulated channel electric field by a DMG structure. With a gate length of 0.1 mu m, the peak values of f(T)/f(MAX) of the designed DMG MODFET are obtained as 48.6/50.6 GHz, respectively. Moreover, a comprehensive thermal analysis is conducted between the SMG and DMG devices under steady-state and transient conditions. The DMG MODFET exhibits a lower maximum temperature than the SMG counterpart due to the reduced channel electric field, each subjected to the same power dissipation. This finding underscores the potential of the beta-(AlxGa1-x)(2)O-3/Ga2O3 MODFET with the DMG architecture as a promising approach for high-power radio frequency operations.