Flexible and Self-Powered Photoelectrochemical-Type Solar-Blind Photodetectors Based on Ag Nanowires-Embedded Amorphous Ga₂O₃ Films

The development of flexible electronics for detecting solar-blind deep ultraviolet (UV-C) light holds great promise for emerging technologies. Here, flexible photoelectrochemical photodetectors (PEC-PDs) are demonstrated for self-powered solar-blind UV-C sensing based on one-step radio frequency sputtered amorphous gallium oxide (a-Ga2O3) thin films on indium tin oxide-coated polyethylene naphthalate (ITO/PEN) substrates in a simple and low-cost manner. Surface functionalization of the ITO/PEN substrates with silver nanowires (Ag NWs) successfully embedded within the a-Ga2O3 films significantly enhances the optoelectronic performance. Incorporating Ag NWs reduces charge transfer resistance and potential barrier, while enhancing built-in electric field at the Ag NWs/a-Ga2O3 interface, synergistically facilitating efficient electron transport. Consequently, the Ag NW-modified PEC-PDs exhibit approximately two-fold increases in key metrics including responsivity (11.23 mA W-1) and response times (0.07/0.09 s rise/decay) under 254 nm illumination compared to pristine devices. Moreover, the Ag NW-functionalized PEC-PDs demonstrate superb mechanical flexibility and fatigue durability, maintaining approximate to 95% of the initial photoresponse current and responsivity after 500 bending cycles. This work provides valuable insights into designing high-performance flexible self-powered PEC-PDs through ingenious photoanode engineering.