Temperature and pressure dependent tunable GaAsSb/InGaAs QW heterostructure for application in IR-photodetector

A temperature and pressure dependent tunable type-II DQW (double quantum well) heterostructure with the specific composition and combination of In0.1Ga0.9As, In0.55Ga0.45As and GaAs0.15Sb0.85 layers have been designed and analyzed for the purpose of designing the QW infrared photodetector. Using k.p. theory, the optical response for the optimized heterostructure is investigated as optical absorption. The electronic and hole wavefunctions, as well as the conduction and valence band E-K curves, are computed and examined using the k.p. technique. Furthermore, the dipole matrix elements are also computed in order to comprehend the optical absorption-causing transition process. The partial and total optical absorption are computed in the X- and Ypolarization modes for the proposed QW heterostructure. The maximal optical absorption was found to meet at two wavelengths, around 2700 and 3600 nm, under the X-polarization mode. The absorption peak is stronger and significantly greater at 2700 nm than it is at about 3600 nm. The maximal absorption in the Y-polarization mode meets between about 2550 and 3350 nm. To examine the tunability, the optical absorption spectra have also been studied with variable temperature (rang: 273K-350K) and pressure (range: 0-12 GPa). With increasing temperature and pressure, the absorption peaks have been found to enhance pointedly. It may be argued that the suggested QW heterostructure may be appropriate for developing QW photodetectors to detect radiation in the shortwave infrared (SWIR) area based on the findings of the simulations.