Improving energy storage performance of sol-gel-derived PbZrO₃ thin films by adjusting the water/acetic acid solvent ratio

PbZrO3 and PbZrO3-based thin films as a typical antiferroelectric material have been widely studied for high-density energy storage capacitors. To prepare high-quality PbZrO3 films by the sol-gel method, it is necessary to fully understand the effects of precursor solution on the microstructure and electrical properties of the films. In this study, the microstructure and electric properties of the sol-gel-derived PbZrO3 thin films were studied as a function of the water/acetic acid ratio from 10/90 to 85/15 by volume in the precursor solution. The results indicate that the water/acetic acid ratio had a significant impact on the crystalline quality, microstructure, electrical properties, and energy storage performance of PbZrO3 thin films. When the water/acetic acid ratio was relatively low, that is, 20/80, the PbZrO3 thin films had the best antiferroelectric properties and energy storage performance. The films exhibited the well-developed hysteresis loop, with maximum polarization (P-max) and remanent polarization (P-r) of 72.55 mu C/cm(2), and 3.71 mu C/cm(2), respectively. Due to the larger P-max and smaller P-r, as well as enhanced electrical breakdown strength (E-BDS), the films exhibited the maximum W-rec of 21.9 J/cm(3) at 1000 kV/cm. Our results demonstrate that to obtain better antiferroelectric properties and energy storage performance, it is preferable to add a low proportion of water/acetic acid in the precursor sol-gel solution. The P-E hysteresis loops and energy storage performance of the PbZrO3 thin films prepared with the water/acetic acid ratio of (a) 10/90, (b) 20/80, (c) 35/65, (d) 85/15 under 600 kV/cm(-1). [GRAPHICS]