Thermal Assisted Intermixing at AlScN/Pt Interfaces

Minghua Li,Wendong Song,Chen Liu,Li Chen,Huamao Lin,Yao Zhu

2023 IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, ISAF（2023）

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Abstract

Ti/Pt/Al0.6Sc0.4N/Pt capacitor structure was fabricated. Post-annealing was carried out in nitrogen atmosphere at temperature up to 800 degrees C to evaluate the thermal stability of the AlScN/Pt interfaces. Material characterization revealed that the AlScN (0002) and the Pt (111) textures remained stable until the annealing temperature did not exceed 500 degrees C. Annealing at 600 degrees C and above resulted in notable Pt diffused into the AlScN film, and the bottom Pt reacted with the Si substrate to form PtSi. The thermal assisted intermixing reduced the effective dielectric thickness. Lower dielectric breakdown voltage was thus recorded.

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Key words

scandium aluminum nitride,Pt electrode,thermal annealing,interfacial diffusion,dielectric breakdown

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