Lead Free KNN Thin Films Based Actuator Devices Realized in a 200 MM Silicon Technology for Piezoelectric Transducer Applications

This paper reports the realization and characterization of (K,Na)NbO 3 (KNN) based actuator devices in a 200 mm MEMS line for piezoelectric transducer applications. State-of-the-art KNN films of thickness 1.9 µm were sputter deposited on 200 mm SOI substrates and integrated into various types of actuator devices using industrial compatible MEMS process. These actuators show excellent performance, close to Pb(Zr,Ti)O 3 (PZT) based counterparts. This first demonstration opens the way to the replacement of PZT, which must be banned due to lead, in piezoMEMS industry in the near future.