Cycling Condition Impacts on 3D QLC NAND Reliability
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)(2024)
摘要
The impact of cycling conditions on data retention is evaluated using state-of-the-art 3D charge trap QLC NAND flash. We characterize the raw bit error rate and optimal read voltage offsets for different cycling parameters, such as program/erase cycle count, dwell time, and cycling temperature. The presented results can provide useful insights into the reliability of modern charge-trap NAND flash and guide the design of flash management algorithms in the NAND controller.
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关键词
NAND flash,dwell time,data retention,RBER,reliability
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