Reduction of contact resistance to PVD-MoS₂ film using aluminum–scandium alloy (AISc) edge contact

Shinya Imai, Ryosuke Kajikawa,Takamasa Kawanago,Iriya Muneta,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Kuniyuki Kakushima,Hitoshi Wakabayashi

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2024）

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摘要

The contact resistance was reduced by aluminum-scandium alloy (AlSc) edge contact for the MoS 2 film deposited by sputtering. Moreover, after annealing in a forming gas atmosphere, the contact resistance further decreased with an increase in the annealing temperature. These results contributed to a technology of p/n stacked 2D-CFET devices using MoS 2 film.

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关键词

transition metal di-chalcogenide (TMDC),molybdenum disulfide (MoS₂),ultra-high vacuum (UHV) radio frequency (RF) magnetron sputtering,edge contact,aluminum–scandium alloy (AlSc)

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