A TCAD Framework for HCD in n-MOSFETs for PMIC Applications

Sentaurus Device TCAD is enabled to simulate the carrier and lattice heating, trap generation, and the impact of generated traps on parametric shift during Hot Carrier Degradation (HCD) stress in MOSFET. The carrier and lattice heating are calculated using Spherical Harmonics Expansion (SHE) and a coupled Drift-Diffusion (DD) with Hydrodynamic (HD) models, respectively. Trap generation is simulated by the Reaction-Diffusion-Drift (RDD) model. The coulomb scattering term of the mobility model in TCAD is suitably modified to simulate the impact of localized generated traps. The TCAD setup is validated using multi-parametric shift experimental HCD data across different stress conditions.