A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

In this work, a new $\mathrm{Hf}\_{0.5} \mathrm{Zr}\_{0.5} \mathrm{O}\_{2}$ (HZO)-based ferroelectric (FE) capacitor with a T-phase-dominated anti-ferroelectric (AFE) ZrO 2 seed layer is proposed and experimentally demonstrated, with enhanced ferroelectricity and endurance behavior simultaneously compared with conventional HZO FE capacitor or O-phase-dominated $\mathrm{ZrO}_{2} / \mathrm{HZO}$ capacitor. The endurance of fabricated $\mathrm{AFE}-\mathrm{ZrO}_{2} / \mathrm{FE}-\mathrm{HZO}$ stacked capacitor can be improved to more than $10^{9}$ while still ensuring high remanent polarization $\left(\mathrm{P}_{\mathrm{r}}\right)$, benefiting from the extracted extremely-low M phase ratio (3.7%) in HZO, the lower trap charge density (about 12% reduction) and the slower leakage current growth rate in the interface, which indicates its great potential for FE memory applications.