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Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited)

Soumya Ranjan Panda, Philippine Billy,Alexis Gauthier,Nicolas Guitard,Pascal Chevalier,Magali De Matos,Thomas Zimmer,Sebastien Fregonese

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2024）

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Abstract
The linearity and efficiency of two distinct SiGe HBT devices, manufactured using different process technologies (B55 & B55X intermediate) by STMicroelectronics, are examined with a focus on energy-efficient applications under large-signal conditions.
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Key words
SiGe HBT,Load-pull characterization,Microwave Power Amplifier
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