Damage characteristic of electronic devices caused by products generated by Al/Ep/KMnO4/TiH2 active material projectile hypervelocity impacting on aluminum target

As the space environment becomes more competitive, space offense and defense are increasing every day. Projectiles made of reactive materials can achieve highly effective target destruction due to their good penetration, ignition and detonation capabilities as the kill element in space attacks. When a spacecraft encounters a hypervelocity impact from a projectile of active material, it will have a serious impact on the surface material and internal electronics (logic chips, super-capacitors, etc.), leading to anomalies in the spacecraft's on-orbit operation. In order to study the damage characteristics of internal typical logic chips and super-capacitor modules caused by the hypervelocity impact of active material projectiles on the surface of spacecraft, the simulated satellite experiment of Al/Ep/KMnO4/TiH2 active material projectiles hypervelocity impacting on aluminum target was performed. By using the self-built experimental loading system, plasma characteristic parameter diagnosis system, radiation temperature measurement system and electronic device function detection system, the characteristic parameters of plasma, light flash radiation temperature, temperature evolution process of logic chip and super-capacitor at specific position under different impact velocities are obtained. When the damage behavior of Al/Ep/KMnO4/TiH2 active material projectile impacts on the surface of simulated satellite, the main reasons affecting electronic devices and the damage characteristics of impact products on logic chip and super-capacitor are analyzed. The experimental results show that the plasma is the main reason for interfering with the operation of logic chips and super-capacitors. When the active material projectile impacts the simulated satellite at the speed of 1.26 km/s, 1.67 km/s and 2.13 km/s, the charge and discharge time of the super-capacitor increases by 3.28 times, 4.57 times and 6 times, respectively, and the maximum operating voltage performance decreases by 12.23 %, 14.44 % and 18.15 %, respectively. When the impact velocities are 1.67 km/s and 2.13 km/s, the output signal of the CD74HC00 chip appears transient damage due to the injection of the plasma generated by the impact, which last 0.4 ms and 1.8 ms, respectively.