Dark-Current-Blocking Mechanism in BIB Far-Infrared Detectors by Interfacial Barriers

Changyi Pan,Ziwei Yin,Zhiyong Song,Yao Yao,Yi Zhang,Jiaming Hao,Tingting Kang,Huiyong Deng,Huizhen Wu,Ning Dai

IEEE Transactions on Electron Devices（2021）

引用 5|浏览21

暂无评分

摘要

We fabricate Ge:B-blocked impurity band (BIB) far-infrared detectors using near-surface processing techniques. The current–voltage ( ${I}$ – ${V}$ ) characteristics and the energy band structure are investigated. It is found that there are three interfacial barriers in Ge:B BIB detectors due to the bandgap narrowing effect. The barrier height can be adjusted by changing the doping concentration in...

查看译文

关键词

Detectors,Dark current,Impurities,Doping,Resistance,Temperature distribution,Plasma temperature

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要