Cu_xAl_1-x films as Alternatives to Copper for Advanced Interconnect Metallization

Cu_xAl_1-x thin films with 0.2 ≤ x ≤ 0.7 have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were used to obtain the Cu_xAl_1-x electronic structure and cohesive energy to benchmark different intermetallics and their prospects for interconnect metallization. Next, thin Cu_xAl_1-x films were deposited by PVD with thicknesses in the range between 3 and 28 nm. The lowest resistivities of 9.5 μΩcm were obtained for 28 nm thick stochiometric CuAl and CuAl_2 after 400^∘C post-deposition annealing. Based on the experimental results, we discuss the main challenges for the studied aluminides from an interconnect point of view, namely the control of the film stoichiometry, the phase separation observed for off-stoichiometric CuAl and CuAl_2, as well as the presence of a nonstoichiometric surface oxide.