Switching Dynamics of HfO $_{\text{2}}$ –ZrO $_{\text{2}}$ Nanolaminates With Different Laminate Thicknesses

In this work, the switching dynamics of HfO $_{\text{2}}$ –ZrO $_{\text{2}}$ nanolaminate ferroelectric (FE) films with different laminate thicknesses are investigated. Metal/FE layer/metal capacitors with HfO $_{\text{2}}$ –ZrO $_{\text{2}}$ alternate cycle ratios n ( n $=$ 1, 8, 15, 25, and 37) are fabricated, and the hysteresis loop and switching dynamics of these devices are measured. All nanolaminate samples exhibit ferroelectricity and show reduced spontaneous polarization compared with the controlled Hf $_{\text{0}.\text{5}}$ Zr $_{\text{0}.\text{5}}$ O $_{\text{2}}$ (HZO) sample. The differences in switching dynamics are analyzed by the inhomogeneous field mechanism (IFM). It is found that: 1) the switching becomes slower with laminate thickness increases. The HZO sample shows the fastest switching due to fewer pinned domains. 2) Decreasing the laminates within a certain range to form a laminate structure is beneficial for higher remanent polarization, better endurance, and fast switching speed. The improvement in the HfO $_{\text{2}}$ –ZrO $_{\text{2}}$ alternate laminate device with 8 and 15 cycle ratios could be attributed to higher orthorhombic fraction, grain boundary interruption, and enhanced nucleation. This work provides guidelines for designing devices with HfO $_{\text{2}}$ –ZrO $_{\text{2}}$ nanolaminate layers.