Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors
IEEE Transactions on Nanotechnology(2024)
Abstract
We investigated the electrical and material characteristics of atomic layer deposition (ALD) deposition with different sequences and concentrations of HfAlOx in Indium-Tungsten-Oxide thin film transistors (IWO-TFTs). Under the 1A10H case, we observed the best electrical properties, with threshold voltage (Vt) closest to 0 V, Ion/Ioff value of approximately 6.7×10
7
, subthreshold swing (SS) of 95 mV/dec, smaller interface trap density (Nit) of 5.7×10
12
cm
-2
, and superior immunity to stress-induced degradation. The X-ray photoelectron spectroscopy (XPS) results provided insights into the stability of the interface between the gate dielectric layer and the channel layer. Specifically, the 1A10H conditions exhibited a more stable interface with fewer defects. Furthermore, the choice of HfO
2
as the interface layer material between HfAlO
x
and IWO, compared to Al
2
O
3
, demonstrated superior performance for different Hf/Al sequence combinations. These findings offer promising directions for enhancing the stability of IWO-TFTs through improvements in the interface between the channel layer and the gate dielectric layer.
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Key words
HfAlOx,IWO film,Reliability,Sequence
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