Wide Process Temperature of Atomic Layer Deposition for In2o3 Thin-Film Transistors Using Novel Indium Precursor (N,n’-Di-tert Butylacetimidamido)Dimethyllindium)
Nanotechnology（2024）
关键词
In precursor,(N, N '-di-tert-butylacetimidamido)dimethyllindium (DBDMI),atomic layer deposition,thin-film transistors,indium oxide semiconductor,high temperature deposition
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