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Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review

Zhong Pan,Yifan Hu, Jingwen Chen, Fucheng Wang,Yeojin Jeong,Duy Phong Pham,Junsin Yi

Transactions on Electrical and Electronic Materials（2024）

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Abstract
Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80
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Key words
Thin film transistor,Oxygen vacancy,IGZO,Process,Annealing,Passivation layer
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