Generation of single photon emitters at a SiO₂/SiC interface by high-temperature oxidation and reoxidation at lower temperatures

Abstract We report on an approach to produce single photon emitters at the SiO2/SiC interface. We form a high-quality SiO2/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200–1000°C) to generate the emitters. After reoxidation at 800°C, we confirmed the formation of emitters with a bright luminescence (> 50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO2/SiC interface.